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Reduced ground bounce and improved latch-up suppression through substrate conductionGABARA, T.IEEE journal of solid-state circuits. 1988, Vol 23, Num 5, pp 1224-1232, issn 0018-9200Article

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An automated reverse-bias second-breakdown transistor testerBERNING, D.Journal of research of the National Institute of Standards and Technology. 1991, Vol 96, Num 3, pp 291-304, issn 1044-677XArticle

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Reversible electrical breakdown of lipid bilayers: formation and evolution of poresGLASER, R. W; LEIKIN, S. L; CHERNOMORDIK, L. V et al.Biochimica et biophysica acta. 1988, Vol 940, Num 2, pp 275-287, issn 0006-3002Article

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Etude des comportements thermique et électrique couplés de cellules et modules photovoltaïques spatiaux en liaison avec leurs conditions de fonctionnement: modélisation, analyse par thermographie infrarouge = Electrical and thermal behaviour of silicon solar cells assemblies in simulated spatial operating conditions: modellng and analysis by infrared thermographyDuveau, Jean; David, Jean-Pierre.1991, 202 p.Thesis

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